Simulation Study of Porous ZnO Thin Film-Based Capacitive Pressure Sensor
کد مقاله : 1107-ISME (R1)
اسماعیل شکری قمیش *1، نگین معنوی زاده2، زهره گلشن بافقی3
1دانشگاه خواجه نصیرالدین طوسی
2استاد دانشگاه خواجه نصیر
3فارغ التحصیل دانشگاه خواجه نصیر
چکیده مقاله:
Flexible pressure sensors based on capacitive induction have become a research hot-spot due to the low energy consumption and excellent performance, in recent years. In this paper, capacitive pressure sensors are simulated in two porous and non-porous structures of zinc oxide dielectric layer. The results of the capacitive pressure sensors indicate the sensitivity of the non-porous structure is about 0.05%, whereas in the porous structure the sensitivity of the sensor is higher. As the porosity in the dielectric layer increases, the sensitivity increases as well. Thus, the pressure sensor with 40% porosity in the dielectric layer has a sensitivity of 0.13%. The investigation on the impact of the size of pores on the porous structure illustrates that the sensitivity maximizes at pores’ radius of about 100nm. However, by increase or decrease the radius of the pores, the sensitivity of sensor decreases. Moreover, the performance of porous structure sensor is studied in different temperatures. Simulation results show the effect of temperature on the sensitivity of the porous structure is negligible.
کلیدواژه ها:
Capacitive pressure sensor, porous, Zinc oxide.
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